EE 240. Spring Semester 2007
Nanotechnology, Engineering, and Science
Prerequisites: PHY 107, PHY 108.
Corequisites: MTH 241.
EE students should take lab EE 342 in Fall 2007 to complete the EE requirements, non-EE students may take either EE 342 in Fall 2007 or lab PHY 257 in Spring 2007.
Lectures: 200-G Baldy Hall. Days,Time: Tuesday and Thursday, 2:00 - 3:20 pm.
Recitation: 4 Clemens and predominantly: 139 Hochstetter. Day,Time: W., .
Lecture Packet “Introduction
to Nanoelectronics: Science, Nanotechnology, Engineering, and Applications” to
be available at Great Lakes Graphics&Printing, UB Commons (the book should
be published in July 2007 by
1. C. P. Poole and F. J. Owens, “Introduction to nanotechnology ”, John Wiley & Sons, 2003.
2. C. Dupas, P. Houdy, M. Lahmani “Nanoscience: Nanotechnologies and Nanophysics, Springer, 2004.
3. “Nanometer structures: theory, modeling, and simulation”, Editor: Akhlesh Lakhtakia, ASME Press, 2004.
4. S. E. Lyshevski, “Nano- and micro-electromechanical systems fundamentals of nano and microengineering ”, 2nd Edition, CRC Press, 2004.
Vladimir Mitin, Professor of EE, Bonner Hall, Room 312C, E-mail firstname.lastname@example.org.
Office Hours: Tuesday and Thursday, 10:00 - 11:00 am. Office: 312C Bonner Hall, North Campus.
The course is prepared for undergraduate students on their early stage of education. The major goals and objectives are to provide second–year undergraduate students with knowledge and understanding of nanoelectronics as an important interdisciplinary subject. Through the examples, exercises, and educational Java applets the course will cover electromagnetic waves and quantum mechanics including the quantum-mechanical origin of the electrical and optical properties of materials and nanostructures, chemically-directed assembly of nanostructures, biomolecules, traditional and nontraditional methods of nanolithography, interactions between electronic and optical properties, as well as the forefront topics such as organic heterostructures, nanotubes, and quantum computing. Recently acquired equipment, that includes four scanning probe microscopes, will be used by students in Fall 2007 as they would take lab EE 342 to get hands on experience on characterization of nanostructures.
1. Introduction. Survey of modern electronics and trends towards nanoelectronics
1.1. Discussion of the International Technology Roadmap characteristics: Need for new concepts in electronics
1.2. From microelectronics towards biomolecule electronics
2. Particles and waves
2.2. Classical particles
2.3. Classical waves
2.4. Wave-particle duality
2.5. Closing remarks
3. Wave mechanics
3.2. Schrödinger wave equation
3.3. Wave mechanics of particles: selected examples
3.4. Atoms and atomic orbitals
3.5. Closing remarks
4. Materials for nanoelectronics
4.3. Crystal lattices: Bonding in crystals
4.4. Electron energy bands
4.5. Semiconductor heterostructures
4.6. Lattice-matched and pseudomorphic heterostructures
4.7. Inorganic-organic heterostructures
4.8. Carbon nanomaterials: nanotubes and fullerenes
4.9. Closing remarks
5. Growth, fabrication, and measurement techniques for nanostructures
5.2. Bulk crystal and heterostructure growth
5.3. Nanolithography, etching, and other means for fabrication of nanostructures and nanodevices
5.4. Techniques for characterization of nanostructures
5.5. Spontaneous formation and ordering of nanostructures
5.6. Clusters and nanocrystals
5.7. Methods of nanotube growth
5.8. Chemical and biological methods for nanoscale fabrication
5.9. Fabrication of nano-electromechanical systems
5.10. Closing remarks
6. Electron transport in semiconductors and nanostructures
6.2. Time and length scales of the electrons in solids
6.3. Statistics of the electrons in solids and nanostructures
6.4. Density of states of electrons in nanostructures
6.5. Electron transport in nanostructures
6.6. Closing remarks
7. Electrons in traditional low-dimensional structures
7.2. Electrons in quantum wells
7.3. Electrons in quantum wires
7.4. Electrons in quantum dots
7.5. Closing remarks
8. Nanostructure devices
8.2. Resonant-tunneling diodes
8.3. Field-effect transistors
8.4. Single-electron-transfer devices
8.5. Potential-effect transistors
8.6. Light-emitting diodes and lasers
8.7. Nano-electromechanical system devices
8.8. Quantum-dot cellular automata
8.9. Closing remarks
Grading: Straight scale will be used for grading with:
(85< - 100)% - A (80 - <85)% - A- (75 - <80)% - B+ (70 - <75)% - B (65 - <70)% - B-
(60 - <65)% - C+ (55 - <60)% - C (50 - <55)% - C- (45 - <50)% - D+ (40 - <45)% - D
(<41)% - F.
It includes: one group project - 20%, five homeworks - 5% each, five quizzes – 2% each, and three exams - 15% each. A group project will be chosen to expand knowledge beyond the material taught in the course. The end result of the group project will be a poster presentation.
Prepared by: Vladimir Mitin Date: January 15, 2007